Thermally induced voltage shift in capacitance–voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al 2 O 3 /InAlN/GaN heterostructures

✍ Scribed by Ťapajna, M; Čičo, K; Kuzmík, J; Pogany, D; Pozzovivo, G; Strasser, G; Carlin, J-F; Grandjean, N; Fröhlich, K

• Book ID: 127211635
• Publisher: Institute of Physics
• Year: 2009
• Tongue: English
• Weight: 248 KB
• Volume: 24
• Category: Article
• ISSN: 0268-1242
• DOI: 10.1088/0268-1242/24/3/035008