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Thermal quenching of single localized excitons in GaInNAs layers

✍ Scribed by Latkowska, M.; Kudrawiec, R.; Sęk, G.; Misiewicz, J.; Ibáñez, J.; Henini, M.; Hopkinson, M.


Book ID
120479302
Publisher
American Institute of Physics
Year
2011
Tongue
English
Weight
914 KB
Volume
98
Category
Article
ISSN
0003-6951

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We have investigated the temperature dependence of photoluminescence (PL) properties of a number of InAs/GaAs heterostructures with InAs layer thickness ranging from 0.5 monolayer (ML) to 3 ML. The temperature dependence of the InAs exciton energy and linewidth was found to display a significant dif