MBE growth of cubic AlN on 3C-SiC substr
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Schupp, Thorsten ;Rossbach, Georg ;Schley, Pascal ;Goldhahn, RΓΌdiger ;RΓΆppischer
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Article
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2010
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John Wiley and Sons
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English
β 312 KB
## Abstract We present our recent results on the growth of cubic AlN (001) layers by plasma assisted molecular beam epitaxy (PAMBE) using freestanding 3CβSiC (001) substrate. For highβquality cβAlN layers reflection highβelectron energy diffraction (RHEED) patterns in all azimuths show RHEED patter