## Abstract The implantation damage and rare earth (RE) luminescence in the wide band gap ternaries AlGaN and AlInN were studied and compared to GaN. For both ternaries lower damage levels were observed and in contrast to GaN, no surface amorphisation occurs during the implantation. Damage recovery
โฆ LIBER โฆ
Thermal doping of rare-earth ions in gallium nitride
โ Scribed by Rahman, Faiz
- Book ID
- 127036694
- Publisher
- Taylor and Francis Group
- Year
- 2008
- Tongue
- English
- Weight
- 262 KB
- Volume
- 55
- Category
- Article
- ISSN
- 0950-0340
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Rare earth doping of III-nitride alloys
โ
Lorenz, K. ;Alves, E. ;Roqan, I. S. ;Martin, R. W. ;Trager-Cowan, C. ;O'Donnell,
๐
Article
๐
2008
๐
John Wiley and Sons
๐
English
โ 167 KB
High-content bulk doping and thermal sta
โ
Lingwei Zeng; Daqin Chen; Lifeng Cui; Feng Huang; Yuansheng Wang
๐
Article
๐
2010
๐
Elsevier Science
๐
English
โ 553 KB
Gallium nitride powders: Mechanism of am
โ
Tiju Thomas; Xiaomei Guo; Junxia Shi; Lori A. Lepak; M.V.S. Chandrashekhar; Kewe
๐
Article
๐
2011
๐
Elsevier Science
๐
English
โ 966 KB
Based on free molecular flow analysis and powder growth experiments, we present evidence that ammonothermal synthesis of GaN powders is primarily a liquid phase process. Rare earth doped GaN nanopaticles were synthesized from as-prepared GaN using a ball-mill assisted solid state reaction. The ball-
Rare-earth impurities in gallium nitride
โ
Caroena, G.; Justo, J.F.; Machado, W.V.M.; Assali, L.V.C.
๐
Article
๐
2012
๐
Elsevier Science
๐
English
โ 289 KB
Near-Infrared-Electroluminescent Light-E
โ
J.โH. Kim; P.โH. Holloway
๐
Article
๐
2005
๐
John Wiley and Sons
๐
English
โ 352 KB
๐ 2 views
Crystallization and thermal properties o
โ
S.V. Stankus; R.A. Khairulin; P.V. Tyagel'sky; I.A. Ivanov
๐
Article
๐
1995
๐
Elsevier Science
๐
English
โ 377 KB