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Thermal donors in silicon: Consistent interpretation of Hall-effect and capacitance transient spectroscopy

✍ Scribed by W. Keller; K. Wünstel

Book ID
104842306
Publisher
Springer
Year
1983
Tongue
English
Weight
390 KB
Volume
31
Category
Article
ISSN
1432-0630

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📜 SIMILAR VOLUMES

Hall effect spectroscopy of thermal dono
Hall effect spectroscopy of thermal donors in silicon films synthesized by oxygen implantation
✍ J. Sicart; F. Vettese; J.L. Robert; S. Cristoloveanu 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 365 KB

The electrical properties of silicon layers formed by imphmtation of oxygen (SIMOX) are controlled by oxygen thermal donors (TDs) which are activated in a high density (lOt-~-lO t~ cm s) during technological processes. It has been found that 650 °C is the annealing temperature at which TDs are activ