Thermal behavior analysis of GaN based epi-material on different substrates by means of a physical-thermal model
✍ Scribed by Tang, Xiao ;Rousseau, Michel ;Defrance, Nicolas ;Hoel, Virginie ;Soltani, Ali ;Langer, Robert ;De Jaeger, Jean-Claude
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 895 KB
- Volume
- 207
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
For gallium nitride (GaN) based microwave power devices, the thermal behavior due to the self‐heating effect constitutes a main limitation because the power dissipation is very high. For this study, a predictive physical–thermal model has been developed to analyze the physical and thermal phenomena observed in experiment.
In this paper, the thermal performances of AlGaN/GaN epitaxies grown on different substrates are determined. It is found that compared with Si substrate, composite substrates: SopSiC (mono‐Si/poly‐SiC) and SiCopSiC (mono‐SiC/poly‐SiC) substrates (V. Hoel et al., Electron. Lett. 44, 238 (2008) 1 and T.J. Anderson et al., J. Vac. Sci. Technol. B 24, 2302 (2006) 2) present better thermal resistances especially at high dissipated power densities with an improvement of 18% for SopSiC substrate and 25% for SiCopSiC substrate at 12 W/mm. Furthermore, polycrystalline diamond is the most promising substrate with a thermal resistance of 5.4 W/m·K at 12 W/mm. The simulation results, such as lattice temperature and thermal resistance, are in good agreement with our measurements.
📜 SIMILAR VOLUMES