Thermal annealing effect on the crack development and the stability of 6,13-bis(triisopropylsilylethynyl)-pentacene field-effect transistors with a solution-processed polymer insulator
✍ Scribed by Jin-Hyuk Bae; Jaehoon Park; Chang-Min Keum; Won-Ho Kim; Min-Hoi Kim; Seul-Ong Kim; Soon Ki Kwon; Sin-Doo Lee
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 375 KB
- Volume
- 11
- Category
- Article
- ISSN
- 1566-1199
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✦ Synopsis
We report the thermal annealing effect on the mobility enhancement, the crack development, and the stability of 6,13-bis(triisopropylsilylethynyl) (TIPS)-pentacene field-effect transistors (FETs) with a solution-processed polymeric insulator. A high value of the field-effect mobility (0.401 cm 2 /V s) is achieved by thermally annealing the TIPS-pentacene FET at 60 °C which corresponds to the baking temperature of the TIPS-pentacene film. We demonstrate that thermal cracks, resulting primarily from side chains of the TIPS-pentacene, play a critical role on the degradation of the electrical properties of TIPS-pentacene FET, particularly in air under atmospheric pressure. The annealing effect is found to suppress both the development of the cracks and the increase of the off-current with time in the ambient environment. It is suggested that the cracks act as trapping sites of moisture and/or oxygen for the off-current flow and thus deteriorate the electrical performances of the TIPS-pentacene FET.