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Theory of the Effects of Rapid Thermal Annealing on Thin-Film Crystallization

✍ Scribed by Dang, E. K. F.; Gooding, R. J.

Book ID
120577898
Publisher
The American Physical Society
Year
1995
Tongue
English
Weight
224 KB
Volume
74
Category
Article
ISSN
0031-9007

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## Abstract We study the influence of high‐temperature annealing (1100–1200 Β°C) on the crystallization of nitrogen‐doped silicon films deposited by LPCVD (low‐pressure chemical vapor deposition) at low temperature (465 Β°C) from disilane Si~2~H~6~ and ammonia NH~3~. Scanning electron microscopy (SEM