Theory of the current-voltage (I-U) characteristics of monopolar and quasi-monopolar semiconductors with different intensities of contact and volume injection
✍ Scribed by A. N. Zyuganov; Yu. G. Pismennyi; S. V. Svechnikov
- Publisher
- John Wiley and Sons
- Year
- 1971
- Tongue
- English
- Weight
- 519 KB
- Volume
- 44
- Category
- Article
- ISSN
- 0370-1972
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✦ Synopsis
Abstract
An undiffused theory of the static current‐voltage characteristics of photosensitive semiconductors is proposed within the limits of the two‐level band scheme which is usual for such materials. The analysis of I‐U characteristics permits the determination of some parameters of the band scheme, injecting properties of the contact and to fix the switching of recombination channel under the conditions of excitation of the semiconductor in the intrinsic absorption region. The finite value of contact injection leads to definite values of the greatest slope of the I‐U characteristic in the region of trap filled limited voltage (V~TFL~).