✦ LIBER ✦
Theory of Second-Order Auger Recombination in Strong Degenerate Small-Gap Semiconductors Application to PbSSe
✍ Scribed by Marion Beiler; M. Mocker; O. Ziep
- Publisher
- John Wiley and Sons
- Year
- 1984
- Tongue
- English
- Weight
- 592 KB
- Volume
- 123
- Category
- Article
- ISSN
- 0370-1972
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✦ Synopsis
Abstract
A theory to estimate the efficiency of second‐order Auger processes in strongly degenerate systems (T → 0 K) is developed, whereby a parabolic isotropic band structure model is adapted to PbS~0.1~Se~0.9~. The calculation of the net recombination rate refers to a range of doping and excitation concentration where first‐order Auger processes are strongly reduced or, in the zero temperature limit, are even forbidden. The numerically calculated small‐signal lifetime for a semiconductor with the doping concentration N~D~ = 10^17^ cm^−3^ has the order of magnitude ≈ 10^−6^ s.