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Theory of mixed conduction due to cationic interstitials in the p-type semiconductor Cu3VS4

✍ Scribed by H. Arribart; B. Sapoval


Publisher
Elsevier Science
Year
1979
Tongue
English
Weight
338 KB
Volume
24
Category
Article
ISSN
0013-4686

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✦ Synopsis


We Eive a treatment of mixed conduction which applies to compounds which are electronic semiconductors and in which the ionic conduction is due to a small number of highly mobile defects in a rigid host lattice. This situation in which the ionic conductivity is small can exist in solids at room temperature as we show on the example of sulvanite (CusVSI) and leads to transport effecls which differ from usual mixed transport. We show in particular that it is possible to measure the concentration of interstitial cations from simple experiments involving only metallic electrodes.