Theory of impurity bands with randomly distributed centers

✍ Scribed by P. Aigrain

• Publisher: Elsevier Science
• Year: 1954
• Weight: 245 KB
• Volume: 20
• Category: Article
• ISSN: 0031-8914
• DOI: 10.1016/s0031-8914(54)80210-2

✦ Synopsis

TABLE I Valuesofm~[/m~. and of A = / 2 (Maxwellian averages) for n-silicon 68 ° 4.6 1.12 298 ° 4.9 1.21 Table I shows the values of m~lm\*j, and A determined in this way at 78 ° and 298°K, A check on this way of analyzing the data is provided by the fact that
mll/m ± comes out about the same at the two temperatures, as it should. On the other hand, the quantity A --1, which measures the departure of • from constancy, increases considerably with increasing T. This is consistent with the expected increase of intervalley scattering, provided impurity scattering is of only moderate importance at the lower temperature.