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Theory of electron mobility in dense gases with small polarizability

✍ Scribed by A.Ya. Polischuk


Publisher
Elsevier Science
Year
1984
Weight
278 KB
Volume
124
Category
Article
ISSN
0378-4363

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## Abstract We have demonstrated a high sheet carrier concentration in AlGaN‐channel high‐electron‐mobility transistors (HEMTs) with AlN barrier layer. We investigate the epitaxial structure of these HEMTs by X‐ray diffraction and reveal that the partial lattice relaxation occurs in the Al~0.51~GaN