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Theoretical study of the gradual chemical transition at the Si-SiO2 interface

✍ Scribed by K. Hübner; E.-D. Klinkenberg; A. Stern


Publisher
John Wiley and Sons
Year
1986
Tongue
English
Weight
790 KB
Volume
135
Category
Article
ISSN
0370-1972

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Cyanide treatment, which includes the immersion of Si in KCN solutions followed by a rinse, effectively passivates interface states at Si/SiO 2 interfaces by the reaction of CN À ions with interface states to form Si-CN bonds. X-ray photoelectron spectroscopy (XPS) measurements show that the concent