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Theoretical study of sorption and diffusion of lithium atoms on the surface of crystalline silicon and inside it

✍ Scribed by Kuzubov, A. A.; Eliseeva, N. S.; Popov, Z. I.; Fedorov, A. S.; Serzhantova, M. V.; Denisov, V. M.; Tomilin, F. N.


Book ID
121017635
Publisher
SP MAIK Nauka/Interperiodica
Year
2013
Tongue
English
Weight
233 KB
Volume
97
Category
Article
ISSN
0021-3640

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## Abstract The adsorption and diffusion of N atoms on the three low‐index Cu planes were studied using 5‐parameter Morse potential (5‐MP) method, and the best theory‐experiment agreement was obtained. N atom of Cu(100) surface sit on the fourfold hollow site with the vertical height of 0.018 nm cl