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Theoretical study of charge trapping levels in silicon nitride using the LDA-1/2 self-energy correction scheme for excited states

✍ Scribed by Weslley S. Patrocinio; Mauro Ribeiro Jr.; Leonardo R.C. Fonseca


Book ID
116760364
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
689 KB
Volume
177
Category
Article
ISSN
0921-5107

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