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Theoretical study of a channel-doped separate gate Si MOSFET (SG-MOSFET) by two-dimensional computer simulation

✍ Scribed by Yamaguchi, K.; Takahashi, S.; Kodera, H.


Book ID
114593681
Publisher
IEEE
Year
1981
Tongue
English
Weight
443 KB
Volume
28
Category
Article
ISSN
0018-9383

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