On the pownGa1 surface Ior the Me process. eleven slationary points (UHF. 3-21G) have been localed: six minima. three saddle points and two stationary poims of higher order. The most s[able C,H: syskzm has a linear C-H-H-C bond.
Theoretical Investigation on the Reactions of H with (CH3)4-nSiHn (n = 1–4)
✍ Scribed by Qing-Zhu Zhang; Ji-Guo Zhang; Shao-Kun Wang; Miao Zhang; Chuan-Pu Liu; Yue-Shu Gu
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 421 KB
- Volume
- 19
- Category
- Article
- ISSN
- 0256-7660
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
The abstractions of H with (CH~3~)~4‐n~SiH__~n~__ (n = 1–4) have been investigated at high levels of ab initio molecule orbital theory. Geometries have been optimized at the MP‐2 level with 6–31G(d) basis set, and G2MP2 level has been used for the final energy calculations. Theoretical analysis provided conclusive evidence that the main process occurring in each case is the abstraction of H from the SiH bond leading to the formation of the H~2~ and silyl radicals; the abstraction of H from CH bond has higher barrier and is difficult to react in each case. The kinetics of the title reactions have been calculated with variational transition state theory over the temperature range 200–1000 K, and the theoretical rate constants match well with the experimental values.
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