Theoretical investigation of the dangling bond defects in hydrogenated amorphous silicon (a-Si:H) by the self-consistent-field X-alpha scattered-wave cluster molecular-orbital method

✍ Scribed by C.F. Lo; K.H. Johnson; D. Adler

• Book ID: 115986536
• Publisher: Elsevier Science
• Year: 1988
• Tongue: English
• Weight: 327 KB
• Volume: 99
• Category: Article
• ISSN: 0022-3093
• DOI: 10.1016/0022-3093(88)90461-9