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Theoretical investigation of native defects, impurities, and complexes in aluminum nitride

✍ Scribed by Stampfl, C.; Van de Walle, C. G.


Book ID
120244668
Publisher
The American Physical Society
Year
2002
Tongue
English
Weight
391 KB
Volume
65
Category
Article
ISSN
1098-0121

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A review of the selected results concerning the role of hydrostatic pressure in studies of impurity and defect centers in IIIΒ±V nitrides, and in InGaAsN with small amount of N is presented. Firstly, the shallow to deep impurity state transition for basic donors, i.e. Si and O in GaN and AlGaN and th