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Theoretical gain in strained InGaAs/AlGaAs quantum wells including valence-band mixing effects

✍ Scribed by Corzine, S. W.; Yan, R. H.; Coldren, L. A.


Book ID
120349218
Publisher
American Institute of Physics
Year
1990
Tongue
English
Weight
659 KB
Volume
57
Category
Article
ISSN
0003-6951

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Theory of carrier gain dynamics in InGaA
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Calculations of the femtosecond gain dynamics in InGaAs/AlGaAs strained-layer single-quantum-well diode lasers are presented and compared to experiments which use a novel multiple-wavelength pump probe technique. We develop a detailed theoretical model for the gain dynamics in a quantum well laser d