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Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors

✍ Scribed by Dong Ji; Yanwu Lu; Bing Liu; Guipeng Liu; Qinsheng Zhu; Zhanguo Wang


Book ID
119373373
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
477 KB
Volume
153
Category
Article
ISSN
0038-1098

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