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Theoretical calculation and experimental evidence of the real and apparent bandgap narrowing due to heavy doping in p-type Si and strained Si1−xGex layers

✍ Scribed by J. Poortmans; S.C. Jain; D.H.J. Totterdell; M. Caymax; J.F. Nijs; R.P. Mertens; R. Van Overstraeten


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
908 KB
Volume
36
Category
Article
ISSN
0038-1101

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