Theoretical Angle-Resolved X-Ray Photoelectron Spectra from GaAs (110)
✍ Scribed by A. Chassé; P. Rennert
- Publisher
- John Wiley and Sons
- Year
- 1987
- Tongue
- English
- Weight
- 303 KB
- Volume
- 141
- Category
- Article
- ISSN
- 0370-1972
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## Abstract Angle‐resolved x‐ray photoelectron spectroscopy (ARXPS) has been used to study the composition of oxides grown on 〈110〉 and 〈100〉 GaAs during exposure to UV/ozone. The effects of substrate treatments on oxide growth were compared on 〈100〉 surfaces exposed to an HF treatment and thermal
## Abstract A numerical method for the restoration of the depth–concentration profile from the angular distribution of XPS intensities is described. The proposed method is based on the regularization theory. A simpler formulation of the basic relationships than has been given in previous works^2–8^