โ Scribed by A. S. Zyubin; T. S. Zyubina; G. A. Pokatovich; L. V. Yashina; M. V. Poygin; V. I. Shtanov
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
## Abstract The impurity effect by trivalent metal ion such as Al^3+^, Fe^3+^ and Cr^3+^ during crystal growth of KDP is reasonably well documented. If a metal ion is adsorbed onto the crystal surface, it prevents the step propagation relevant to the crystal growth rate. However, this impurity adso
The production and annealing of oxygen and carbon related defects in electron-irradiated Ge-doped Czochralski silicon have been studied by means of IR spectroscopy. The results demonstrate that the role of Ge changes with increasing Ge content. At low Ge concentrations, much less than 10 20 cm ร3 ,
An extensive ab initio study of the benzene-Pt and benzene-Pt รท complexes is presented. The benzene-Pt complex has been found to have a C s equilibrium structure with Pt bonded to one of the C-C bonds in a bridged position above the plane of benzene, while the cationic complex has a C6v structure. C