Angular and energy dependence of the ion
β
Deenapanray, Prakash N. K.; Petravic, Mladen
π
Article
π
1999
π
John Wiley and Sons
π
English
β 175 KB
Oxygen ions with energy in the range 4-15 keV O' were used to synthesize surface oxide layers by bombarding Si samples at di β erent angles of incidence with respect to the surface normal. High-resolution Rutherford backscattering spectroscopy and channelling were used to determine both the stoichiom