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Theoretical and experimental study of MOS transistors nonuniformly doped by SILOX technique : G. Doucet, F. Van De Wiele and P. Jespers. Solid-State Electronics19, 191 (1976)


Publisher
Elsevier Science
Year
1976
Tongue
English
Weight
118 KB
Volume
15
Category
Article
ISSN
0026-2714

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