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Theoretical and experimental studies of surface processes in the course of molecular-beam epitaxy of gallium nitride

โœ Scribed by I. A. Bobrovnikova; I. V. Ivonin; V. A. Novikov; V. V. Preobrazhenskii

Book ID
111444284
Publisher
Springer
Year
2009
Tongue
English
Weight
201 KB
Volume
43
Category
Article
ISSN
1063-7826

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Raman spectroscopy was applied to monitor the growth of GaN at temperatures around 600 ร„C without interrupting the growth process. GaN was deposited on GaAs(100) and Si(111) substrates by molecular beam epitaxy using elemental Ga and atomic nitrogen provided by an r.f. plasma source. Sufficient sign