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Theoretical analysis of the effect of amplified luminescence on the modulation response of laser diodes

✍ Scribed by L. I. Burov; V. P. Gribkovskii; P. S. Grigelevich; M. I. Kramar; G. I. Ryabtsev; K. A. Shore; S. V. Voitikov; R. Kragler

Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
234 KB
Volume
14
Category
Article
ISSN
0894-3370

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✦ Synopsis

Abstract

A theoretical framework is established for the investigation of the effect of amplified luminescence, non‐radiative recombination, photon losses, and gain non‐linearity on the threshold current characteristics and small‐signal modulation responses of bulk and quantum‐well (QW) 1.3 and 1.55 µm In~x~Ga~1−x~As~y~P~1−y~/InP laser diodes. It is shown that the rate of recombination induced by amplified luminescence exhibits a highly non‐linear dependence on both carrier concentration and temperature. Amplified luminescence and Auger recombination increase the laser threshold and contribute strongly to the device threshold current temperature sensitivity. Amplified luminescence and Auger recombination are shown to have a significant detrimental effect on the modulation properties of long‐wavelength laser diodes. Copyright © 2001 John Wiley & Sons, Ltd.

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