The X˜1A1, a˜3B1, a˜1B˜1, and B˜1A1 electronic states of SiH2
✍ Scribed by Yukio Yamaguchi; Timothy J. Van Huis; C. David Sherrill; Henry F. Schaefer III
- Publisher
- Springer
- Year
- 1997
- Tongue
- English
- Weight
- 369 KB
- Volume
- 97
- Category
- Article
- ISSN
- 1432-2234
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The spectroscopic characteristics of the three lowest-lying electronic state-s of SiRa. SiHHF, and SiFa have been predicted via a priori qnantmn-mechanical methods\_ Where experimental results are available, the theoretical predictions usbaBy agree well. SpeciticaBy Rao's identification of the 3Br a
## Abstract CCl~2~ free radicals were produced by a pulsed dc discharge of CCl~4~ in Ar. Ground electronic state CCl~2~(X) radicals were electronically excited to the A^1^B~1~ (0,4,0) vibronic state with an Nd:YAG laser pumped dye laser at 541.52 nm. Experimental quenching data of excited CCl~2~(A^