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The variation of the P/N junction position in GaAs/GaAlAs double heterostructures grown by low pressure mo vpe.

✍ Scribed by S. D. Hersee; M. Baldy; J. P. Duchemin


Book ID
112811859
Publisher
Springer US
Year
1983
Tongue
English
Weight
466 KB
Volume
12
Category
Article
ISSN
0361-5235

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