โ Scribed by P.C. Banbury; J. Houghton
No coin nor oath required. For personal study only.
resulting from certain etches. While careful etching apparently removes this layer from n-type germanium, we have found no certain method of removing it from p-type germanium or from n and p-type silicon. The surface layer probably acts in much the same way as the floating j unction in the above experiments; minority carriers from the base semiconductor bias the measuring PrObe through the inversion layer, thus making the probe voltage less dependent on the distance between probe and the source of hole electron pairs. The fact that the inversion layer is on the same surface as the probe and source rather than on the opposite side of a thin bar does not materially effect the argument. The pulse method is dependent only on the actual number of minority carriers in the bar, independent of their special distribution. Hence this method is superior for these materials.
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