The use of MOS structure for the design of high value resistors in monolithic integrated circuits : L. Vadasz, IEEE Trans. Electron Devices, ED13, No. 5, may (1966), p. 459

• Publisher: Elsevier Science
• Year: 1967
• Tongue: English
• Weight: 97 KB
• Volume: 6
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(67)90230-2