Improving the quality of meshes for the
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N. Hitschfeld; L. Villablanca; J. Krause; M. C. Rivara
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Article
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2003
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John Wiley and Sons
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English
⚖ 498 KB
## Abstract This paper discusses a new post‐process algorithm for generating valid Delaunay meshes for the Box‐method (finite‐volume method) as required in semiconductor device simulation. In such an application, the following requirements must be considered: (i) in critical zones of the device, ed