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The use of hydrogen passivation to fabricate Schottky diodes for DLTS measurements of heavily-doped p+ Si

✍ Scribed by Y. Tokuda; T. Namizaki; T. Okumura


Book ID
104420479
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
96 KB
Volume
4
Category
Article
ISSN
1369-8001

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