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The use of high magnetic fields for characterisation of impurities in epitaxial GaAs

✍ Scribed by M.N. Afsar

Book ID
108361169
Publisher
Elsevier Science
Year
1982
Tongue
English
Weight
443 KB
Volume
13
Category
Article
ISSN
0026-2692

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The use of high magnetic fields for the
The use of high magnetic fields for the characterization of impurities in epitaxial GaAs: M. N Afsar Microelectron. J. 13 (1), 15 (1982)
πŸ“‚ Article πŸ“… 1985 πŸ› Elsevier Science 🌐 English βš– 102 KB

The use of high om.~gnetic fields for the characterization of impurities in epitaxiai GaAs M. N AFSAR Microelectron. J. 13 (1), 15 (1982) The only reliable method for indentification of donor contaminants such as Si, S, Si, Sn and Ge in ultra-high purity epitaxial GaAs is the observation of the 1 s