The use of electron back-scattered diffraction to study the regrowth of amorphised silicon-based heterostructures

✍ Scribed by K.D. Vernon-Parry; K.F. Abd-El-Rahman; I. Brough; J.H. Evans-Freeman; J. Zhang; A.R. Peaker

• Book ID: 104420455
• Publisher: Elsevier Science
• Year: 2001
• Tongue: English
• Weight: 146 KB
• Volume: 4
• Category: Article
• ISSN: 1369-8001
• DOI: 10.1016/s1369-8001(00)00099-8

✦ Synopsis

Electron back-scattered diffraction (EBSD) patterns are produced by inelastically scattered electrons and are intimately related to the local crystal orientation and quality. Analysis of the EBSD patterns is a rapid, non-destructive technique, which we have used to follow the regrowth of amorphised silicon-based heterostructures. The effective spatial resolution is 80 nm, and we show that the technique can detect buried amorphous and oxide layers. Crosssectional transmission electron microscopy (XTEM) studies confirm the EBSD results. A gas source MBE-grown Si 1Àx Ge x (x=14.5%) multi-quantum-well structure with good optical properties was implanted with an amorphising dose of either Si or Er, or Si followed by Er. The structure was annealed at 5608C under flowing N 2 and regrowth was monitored at intervals by EBSD. It was found that structures implanted only with Er regrew faster than those implanted only with Si. As expected, the sample implanted with both Si and Er showed regrowth kinetics in between the two.