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The use of current gain as an indicator for the formation of hot spots due to current crowding in power transistors : F. F. Oettinger and S. Rubin. 10th IEEE Annual Proceedings, Reliability Physics 1972, p. 12


Publisher
Elsevier Science
Year
1973
Tongue
English
Weight
110 KB
Volume
12
Category
Article
ISSN
0026-2714

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