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The use of base ballasting to prevent the collapse of current gain in AlGaAs/GaAs heterojunction bipolar transistors

โœ Scribed by Liu, W.; Khatibzadeh, A.; Sweder, J.; Hin-Fai Chau


Book ID
114536401
Publisher
IEEE
Year
1996
Tongue
English
Weight
865 KB
Volume
43
Category
Article
ISSN
0018-9383

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