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The trench Insulated Gate Bipolar Transistor— a high power switching device

✍ Scribed by Florin Udrea; Gehan Amaratunga

Book ID: 108361537
Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 999 KB
Volume: 28
Category: Article
ISSN: 0026-2692
DOI: 10.1016/s0026-2692(96)00058-4

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