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The transport properties of Nb-doped trichalcogenide Ta0.8Nb0.2S3

✍ Scribed by X.Z. Chen; J.Q. Shen; Y. Xu; J. Zhou; Z.A. Xu

Publisher: Elsevier Science
Year: 2004
Tongue: English
Weight: 308 KB
Volume: 352
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2004.07.021

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✦ Synopsis

Single crystals of TaS 3 and Nb-doped Ta 0.8 Nb 0.2 S 3 were grown by the usual vapor-transport method. The low-field DC resistivity, thermoelectric power, and I-V characteristics of both samples have been measured. Non-linear I-V characteristics due to possible CDW transition were found in Ta 0.8 Nb 0.2 S 3 at temperatures up to 400 K and the temperature dependence of resistivity remained insulator-like even when the temperature was as high as 400 K. Possible CDW transition in Ta 0.8 Nb 0.2 S 3 crystals at temperatures above 400 K is suggested and need further studies to confirm.

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