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The transport properties of an inhomogeneous model of amorphous silicon and Germanium films

✍ Scribed by Thomas, P. ;Barna, A. ;Barna, P. B. ;Radnóczi, G.

Publisher: John Wiley and Sons
Year: 1975
Tongue: English
Weight: 669 KB
Volume: 30
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2210300225

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## Abstract The complex band structures, the imaginary parts of the dielectric constant, and the densities of states of electrons in amorphous Ge and Si are calculated using a generalized pseudopotential formalism based on the Green's function techniques. The short range order is assumed to be the