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The transient behaviour of multidimensional PN-diodes in low injection

✍ Scribed by Christian Schmeiser; Andreas Unterreiter


Publisher
John Wiley and Sons
Year
1993
Tongue
English
Weight
625 KB
Volume
16
Category
Article
ISSN
0170-4214

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✦ Synopsis


Abstract

An initial boundary value problem modelling the transient behaviour of a pn‐junction semiconductor diode is simplified by formal asymptotics, where the scaled minimal Debye length and the scaled intrinsic number are considered as small parameters. The implicit assumption on the biasing situation is that of low injection. The simplified model is shown to be equivalent to an integral relation between the evolution of the current and of the contact voltage. A simple switching application is governed by a non‐linear Volterra integral equation for the current. This equation is shown to possess a unique solution globally in time converging to the unique steady state.