Natural "single" crystals of graphite have been irradiated at 15°K with electrons in the energy range 0.3 to 2.0 MeV. Measurements have been made of the change of resistivity with electron dose at all energies. The resistivity changes have been found to vary linearly-with some scatter believed to be associated with temperature fluctuations-with electron dose at rates ranging from: Ap /poAD=~ 3.76% per lOl6 e-cm-2 at 2.0 MeV, to Ap/p0AD<0.30j, per 1016 e-cm-2 at 0.3 MeV. At 2.0 MeV the absolute resistivity change was 1.77 X IO-'R cm per 1016 e-cm-2. The variation of these rates with electron energy has been compared with calculations of the displacement of atoms, including for the higher electron energies a correction for the production of secondary displacements. A displacement energy of 60 eV gives agreement (rt IO eV) with the shape of the experimental curve. Using the value of 60 eV the cross section for producing displacements is 7.1 barns at 2.0 MeV. From this value we calculate that at 2.0 MeV one incident electron per cm2 produces 0.8 displaced atoms per cm3 and consequently that the resistivity change is 2.53.10-2R cm per 19, defects. The resistivity change appears primarily to arise from changes in carrier scattering. The recovery of the resistivity has been studied for annealing between 15 and 300°K. No change was observed between 15 and 80°K. Above 80°K the peak observed by AUSTERMAN and HOVE(~) in polycrystalline graphite has been found in our single crystal specimens. It is not possible yet to decide unequivocally about the nature of the process giving rise to the peak. The main reason for this is that one is not in a position to say that low energy defect movements have not allowed simple interplanar aggregates of interstitials to form even at 15°K.