A high-temperature mass-spectrometric study of the vaporization of (silicon+boron nitride) from a boron-nitride Knudsen cell was conducted in the temperature range T = 1688 K to 1921 K. The partial pressures of Si(g), Si2(g), N2(g), and Si2N(g) were determined. The dissociation reaction: Si2N(g)=2Si
The standard molar enthalpy of formation of tetraethoxysilane: Si(OC2H5)4(l)
โ Scribed by M.G.M. van der Vis; E.H.P. Cordfunke
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 188 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0021-9614
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