The stability and surface reactivity of gallium phosphide nanocrystals

✍ Scribed by D.L Cui; J.Q Pan; Z.C Zhang; B.B Huang; X.Y Qin; M.H Jiang; S.M Gao

• Book ID: 104365059
• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 278 KB
• Volume: 40
• Category: Article
• ISSN: 0960-8974
• DOI: 10.1016/s0960-8974(00)00031-0

✦ Synopsis

The stability and surface reactivity of GaP nanocrystals were characterized by TG-DTA, XRD and XPS measurements. The samples were heated in 02 and N z atmospheres respectively. The experimental curve which describes the mass change as a function of temperature shows that the mass decreases under 330°C but increases in two ~tages between 330°C and 550°C. The curves obtained in O2 and N2 are obviously different. The resuhs of XPS indicate that the density of oxygen atoms bonded chemically to the galliurn atoms on the surface increases when the sample is heated in 02 up to 200°C, whereas the density of nitrogen atoms increased when heated to 330°C in N:. It can be concluded that the N2 could be activated on the surface of GaP nanocrystals at a rather low temperature, and highly reactive nitrogen atoms formed. Our result obtained makes it possible to synthesize a series of nitrogen-containing compounds in N2 gas under moderate conditions.