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The self-organization of Si atoms adsorbed on a Si(100) surface: an atomic level kinetic model

✍ Scribed by Zhenyu Zhang; Horia Metiu


Publisher
Elsevier Science
Year
1993
Weight
410 KB
Volume
292
Category
Article
ISSN
0167-2584

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The ultra-high vacuum scanning tunneling microscope (UHVSTM) has been used to induce desorption of H from the Si(100)-2X1:H surface with atomic-level precision. The study of the desorption mechanism led to the discovery of a substantial isotope effect between H and D, which has recently been employe