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The Role of the Gate Geometry for Cryogenic HEMTs: Towards an Input Voltage Noise Below(0.5~mathrm{nV}/sqrt{mathrm{Hz}})at 1 kHz and 4.2 K

✍ Scribed by Q. Dong; Y. X. Liang; U. Gennser; A. Cavanna; Y. Jin


Book ID
113071533
Publisher
Springer US
Year
2012
Tongue
English
Weight
392 KB
Volume
167
Category
Article
ISSN
0022-2291

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