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The Role of Quantization Effects on the Operation of 50 nm MOSFETs, 250 nm FIBMOS Devices and Narrow-Width SOI Device Structures

✍ Scribed by D. Vasileska; I. Knezevic; R. Akis; S. Ahmed; D.K. Ferry

Book ID: 110430168
Publisher: Springer
Year: 2002
Tongue: English
Weight: 861 KB
Volume: 1
Category: Article
ISSN: 1569-8025
DOI: 10.1023/a:1022980703489

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