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The role of nucleation and heteroepitaxial processes in nanostructuring of Si

โœ Scribed by E. A. Guliants; C. Ji; W. A. Anderson


Book ID
107452774
Publisher
Springer US
Year
2002
Tongue
English
Weight
574 KB
Volume
31
Category
Article
ISSN
0361-5235

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Molecular-dynamics (MD) simulations of excimer-laser annealed Si using the Tersoff potential have been performed and the processes of the nucleation and crystallization of Si are monitored by the order parameter for each atom. The order parameter which identifies each atom belonging to the crystalli